| 摘要 |
<p>The method comprises the following steps: a) producing a semi-insulating or n-type substrate (1); (b) forming an intermediate layer (2) of a p+ doped material on the surface of the substrate; (c) forming an active layer (3) on this intermediate layer, comprising at least one n-doped lower layer; (d) forming a series of components (5) by etching and metallization of this active layer; (g) fixing a common support plate (8) on the assembly thus produced to secure the components mechanically, and; (h) dissolving the intermediate layer material by anodic means and without illumination, leaving intact the other materials so as to separate the substrate from the said components without dissolving it.</p> |
