发明名称 |
Thin-film transistor array for use in a liquid crystal display. |
摘要 |
<p>A thin-film transistor array is suited for the manufacture of an image display utilizing liquid crystal. In the thin-film transistor array, a first electrically conductive layer (2) made principally of aluminum is selectively formed on one surface of a substrate (1). The first electrically conductive layer (2) contains, as an impurity, a high-melting point metal which can be anodized. An oxide layer (3) is formed by an anodization process on the first electrically conductive layer (2), and the first insulating layer (4) is formed on the oxide layer (3) so as to overlay the substrate (1). Furthermore, a first semiconductor layer (5) made principally of silicon is selectively formed on the insulating layer (4), and a pair of second semiconductor layers (6a, 6b) made principally of silicon containing phosphorus are formed on the first semiconductor layer (5). A pair of second electrically conductive layers (7a, 7b) are formed on the paired second semiconductor layers (6a, 6b), respectively. <IMAGE></p> |
申请公布号 |
EP0545327(A1) |
申请公布日期 |
1993.06.09 |
申请号 |
EP19920120366 |
申请日期 |
1992.11.28 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KOBAYASHI, IKUNORI;NAKAMURA, KAZUYOSHI;MATSUNAGA, KOJI;TAKEDA, MAMORU;MATSUOKA, TOMIZO |
分类号 |
G02F1/1362;H01L27/12;H01L29/49 |
主分类号 |
G02F1/1362 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|