发明名称 Power amplifier for HF and HV output - has push=pull power MOSFETS as output devices driven by symmetrical supply voltages via pre-amplifier circuits
摘要 The power amplifier has a pair of identical MOSFET transistors (1,2) with a driver circuit (11, 12) each and a preamplifying stage (16). Each MOSFET is fed by a symmetrical power supply (5) of 200-1000 V driven by a current of few amperes to a load impedance (10) over a frequency in the range of 100 KHz to 1 MHz. The driver circuit brings the gate-source voltage of the MOSFET transistors to a level of 2-6 V. The pre-amplifier circuit with a feedback divider (17, 18) is coupled to the driver circuits. A current sensing resistor (4) and a regulator circuit (13) ensure that the load current, Il, does not exceed a pre-set value and does not damage the output MOSFET transistors. USE/ADVANTAGE - High electrical performance of amplifier makes it ideal for ultrasonic transducer driving.
申请公布号 DE4140263(A1) 申请公布日期 1993.06.09
申请号 DE19914140263 申请日期 1991.12.06
申请人 AKBAY, HALIL ULUSAR, DR., 6100 DARMSTADT, DE 发明人 AKBAY, HALIL ULUSAR, DR., 6100 DARMSTADT, DE
分类号 H03F1/52;H03F3/30 主分类号 H03F1/52
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