发明名称 |
Power amplifier for HF and HV output - has push=pull power MOSFETS as output devices driven by symmetrical supply voltages via pre-amplifier circuits |
摘要 |
The power amplifier has a pair of identical MOSFET transistors (1,2) with a driver circuit (11, 12) each and a preamplifying stage (16). Each MOSFET is fed by a symmetrical power supply (5) of 200-1000 V driven by a current of few amperes to a load impedance (10) over a frequency in the range of 100 KHz to 1 MHz. The driver circuit brings the gate-source voltage of the MOSFET transistors to a level of 2-6 V. The pre-amplifier circuit with a feedback divider (17, 18) is coupled to the driver circuits. A current sensing resistor (4) and a regulator circuit (13) ensure that the load current, Il, does not exceed a pre-set value and does not damage the output MOSFET transistors. USE/ADVANTAGE - High electrical performance of amplifier makes it ideal for ultrasonic transducer driving.
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申请公布号 |
DE4140263(A1) |
申请公布日期 |
1993.06.09 |
申请号 |
DE19914140263 |
申请日期 |
1991.12.06 |
申请人 |
AKBAY, HALIL ULUSAR, DR., 6100 DARMSTADT, DE |
发明人 |
AKBAY, HALIL ULUSAR, DR., 6100 DARMSTADT, DE |
分类号 |
H03F1/52;H03F3/30 |
主分类号 |
H03F1/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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