| 摘要 |
<p>This heterostructure comprises at least one pattern including a thin semiconductor layer (10a, 10b), two semiconductor barrier-layers (12) flanking the thin layer and having a larger forbidden bandwidth than the latter, thus creating a potential well, an attractive ultraslim layer (S) inserted into the thin layer, substantially in the middle of the latter, and made from a semiconductor material belonging to the same family as the material of the thin layer. The heterostructure includes at least two sub-bands whose minimum energy states are confined in the potential well and whose minimum energies are denoted E1 and E2 respectively, with E2 greater than E1, the depth of the well being much greater than E2 and the distance between the energy minima of these sub-bands being at least equal to 400 meV. Application in optoelectronics. <IMAGE></p> |
