Appts. for processing semiconductor wafers in rapid thermal process - comprising substrate support plate with wafer arranged on it

摘要

Appts. comprises a substrate support plate (1) on whose circular surface the wafer is arranged to be heated. The lower surface of the plate is positioned on a cylindrical ring (2) comprising a permeable material for heat radiation. The inner dia. of the ring is approx. the same as that of the wafer. The ring is arranged on a heat permeable plate. The substrate plate has recesses which connect the surface of the semiconductor wafer to the space between the support plate and plate. The semiconductor wafer to be processed is subjected to a deformation force during the course of heating to 2/3 the melting temp. using a vacuum, the vacuum remaining constant over the further heating process until cooling to a temp. that is 1/2 the melting temp. of the semiconductor material. ADVANTAGE - Deformations in the wafers are avoided.