发明名称 |
A HIGH PRECISION SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device in which a conductor is formed on at least a resistance element that is formed by diffusing impurities into a polycrystalline silicon or semiconductor substrate, said conductor having a resistance smaller than that of said resistance element and being maintained at a predetermined potential. Such a constitution of the invention makes it possible to prevent the entrance of impurity ions or noise from the neighboring signal lines or from external units, that cause a change in the resistance of the resistance element, since there is formed a conductor having a predetermined potential. Therefore, the resistance of the resistance element can be stably maintained. |
申请公布号 |
GB2262188(A) |
申请公布日期 |
1993.06.09 |
申请号 |
GB19930001742 |
申请日期 |
1993.01.29 |
申请人 |
* SEIKO EPSON CORPORATION |
发明人 |
YASUNARI * FURUYA;KAZUKO * MORIYA |
分类号 |
H01L23/485;H01L23/58;H01L27/06;H01L27/08 |
主分类号 |
H01L23/485 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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