发明名称 |
EINE HALBLEITERANORDNUNG MIT EINEM FELDEFFEKTTRANSISTOR UND EINER SCHUTZDIODE ZWISCHEN SOURCE UND DRAIN. |
摘要 |
A field effect transistor includes an N-type semiconductor substrate of a drain region, a P-type base region formed in a surface of the semiconductor substrate, an N-type source region formed in the base region, a gate electrode formed on a base region between the source region and the semiconductor substrate, an N-type region having higher impurity concentration than the semiconductor substrate and formed in the surfaces of both the P-type base region and the N-type semiconductor substrate for forming a Zener diode between source and drain, a source electrode formed on the surface and connected to the source and base region, and a drain electrode connected to the semiconductor substrate. The N-type region for forming a Zener diode is formed by an ion implantation method. |
申请公布号 |
DE3877533(T2) |
申请公布日期 |
1993.06.09 |
申请号 |
DE19883877533T |
申请日期 |
1988.11.24 |
申请人 |
NEC CORP., TOKIO/TOKYO, JP |
发明人 |
HATTORI, MASAYUKI, MINATO-KU TOKYO, JP |
分类号 |
H01L27/02;H01L27/07;H01L29/78 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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