发明名称 |
Method of forming trench isolation having polishing step and method of manufacturing semiconductor device. |
摘要 |
<p>A method of forming trench isolation including a burying step of burying trenches by a deposition means for conducting etching and deposition simultaneously and a polishing step of flattening a burying material by polishing is conducted by disposing an isotropic etching step, a multi-layered etching stopper and a protrusion unifying structure. Polishing can be attained with satisfactory flatness uniformly or with no polishing residue even in a portion to be polished in which the etching stopper layer is distributed unevenly. The method can be applied to manufacture of a semiconductor device or the like. <IMAGE></p> |
申请公布号 |
EP0545263(A2) |
申请公布日期 |
1993.06.09 |
申请号 |
EP19920120116 |
申请日期 |
1992.11.25 |
申请人 |
SONY CORPORATION |
发明人 |
GOCHO, TETSUO;HAYAKAWA, HIDEAKI |
分类号 |
H01L21/3065;H01L21/3105;H01L21/311;H01L21/316;H01L21/762 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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