Method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level.

摘要

A method for producing electrically erasable and programmable read-only memory cells with a single polysilicon level, including the use of a sacrificial layer (5) of silicon oxide to produce a high-thickness silicon oxide layer on the active area. The active area of the cell is protected from heavy source and drain implantation in order to improve reliability. <IMAGE>