| 摘要 |
PURPOSE:To provide the method for forming a DLC-Si film excellent in adhesion and having the low coefficient of friction. CONSTITUTION:A substrate 11 is set obliquely in opposition to an ERC plasma chamber 17 in a reaction chamber 14, a reactive gas is introduced into the ECR plasma chamber 17 and a DLC (diamond like carbon) film is formed on the substrate by ECR plasma CVD. At the same time, an Si target 10 arranged in opposition to the substrate 11 in the reaction chamber is irradiated with a laser LX and the substrate 11 is vapor-deposited with Si to form a-DLC-Si film on the substrate. Since the reactive gas introduced into the plasma chamber 17 is excited in the plasma chamber and is fed to the substrate 11 in the shape of a plasma flow by the divergent magnetic field, the DLC film is formed on the substrate 11, and because the Si evaporating grains having high energy are vapor-deposited by laser PVD, the objective a-DLC-Si film excellent in adhesion can be formed. |
