Apparatus and method for in-situ deep ultraviolet photon-assisted semiconductor wafer processing

摘要

An in-situ deep-ultraviolet light generation module (126) for photon-assisted processing of semiconductor wafers (44) comprises a process environment space (152) for photochemical processing applications. Process gas injection space (182) receives reactive process gases and injects them into process environment space (152). Plasma fill space (124) receives a plasma (120) and may direct plasma (120) away from or into the process environment space (152) according to the presence or absence of control gas (160) flow. Control gas space (174) and flow/pressure switch space (154) receive control gas (160) to selectively permit deep-ultraviolet photons or plasma to reach process environment space (152) and interact with wafer (44) for photo-enhanced or plasma-enhanced wafer processing.