发明名称 Semiconductor pressure sensor having double diaphragm structure.
摘要 <p>In a semiconductor sensor having double diaphragm structure, in which pressure to be measured is applied to diaphragm portions having distortion gages via a liquid filled in spaces partitioned by sealed diaphragms, as circuit elements of a signal processing circuit for processing an output of a distortion gage bridge are integrated in and on a semiconductor chip having diaphragm portions, the number of component parts used is reduced, and a compact size, a low cost, and high reliability are attained. This arrangement can be applied to any of the pressure sensors for detecting absolute pressure, relative pressure, and differential pressure. &lt;IMAGE&gt;</p>
申请公布号 EP0545319(A2) 申请公布日期 1993.06.09
申请号 EP19920120321 申请日期 1992.11.27
申请人 FUJI ELECTRIC CO., LTD. 发明人 KATO, KAZUYUKI
分类号 G01L9/04;G01L9/00 主分类号 G01L9/04
代理机构 代理人
主权项
地址