| 摘要 |
A method of producing a Schottky junction including a semiconductor substrate and a metal film includes successively producing on a semiconductor substrate a first insulating film, a second film having a different etching speed from that of the first insulating film, and a third insulating film having a different etching speed from that of said second film, exposing a part of the second film by dry etching the third insulating film, etching the second film using the third insulating film as a mask to expose part of the first insulating film, dry etching the first insulating film to expose part of the substrate, and producing a metal film forming a Schottky junction with the substrate on the exposed part of the semiconductor substrate.
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