发明名称 |
Method for forming shallow junctions with a low resistivity silicide layer |
摘要 |
A method for forming a shallow junction (56) with a relatively thick metal silicide (52) thereover is provided. A first relatively thin layer (38) of a metal is deposited over the surface of a semiconductor substrate. An impurity (40) is then implanted (42) into or through the first layer (38). A relatively thick second layer (48) of metal is deposited over the first layer (38). An anneal process (50) is then performed to out-diffuse the impurities (40) from the first layer (38) into the substrate (32). The anneal also forms a combined metal silicide (52) from the first layer (38) and the second layer (48). The junction (56) thus formed has less surface damage, reduced spiking and reduced implant straggle than junctions formed according to the prior art. An alternate technique is also disclosed wherein an implant into or through a silicide layer is utilized.
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申请公布号 |
US5217924(A) |
申请公布日期 |
1993.06.08 |
申请号 |
US19910644855 |
申请日期 |
1991.01.22 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RODDER, MARK S.;HAVEMANN, ROBERT H. |
分类号 |
H01L21/225;H01L21/285 |
主分类号 |
H01L21/225 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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