| 摘要 |
A method of extracting an impurity profile from a diced semiconductor chip having cellular construction. The cells are arranged in a matrix the columns and rows of which have a defined column pitch ax and a defined row spacing ay. In accordance with the method, the diced chip is bevelled from its original surface to expose the cells. The two probes of a Spreading Resistance Profile (SRP) device are then placed in contact with the dopant regions of two cells in the same row of the matrix, the distance DELTA X between the probes being max, where m is an integer, and the total resistance RT between the probes is measured. The SRP device is then stepped through a plurality of rows in the matrix, contacting cells in the same two columns as in the case of the first measurement, thereby interactively generating a plurality of total resistance RT measurements. The total resistance RT measurements are then combined to obtain the doping profile of the dopant region.
|
