| 摘要 |
Disclosed is a method for forming a conductive pattern by a simple process, wherein adhesion between a substrate and a conductive pattern is excellent and thin line reproducibility is high. An organic thin film transistor having good device characteristics is also disclosed. The method for forming a conductive pattern is characterized by comprising a step of processing the substrate surface with a compound represented by general formula (1), a step of decomposing the compound represented by general formula (1) by photocatalytic action, and a plating step. (R)n-Si(A)3-n-(B) (1) (In the formula, R represents an alkyl group having 8 or less carbon atoms; A represents an alkoxy group or a halogen atom; B represents a substituent containing an SH group; and n represents an integer of 0-2.) |
