| 摘要 |
A semiconductor laser with distributed feedback and with gain coupling comprises regions (18) arranged with a predetermined period in an active layer (13) or in a cover layer (16) on the active layer, so as to be able to produce perturbation in the distribution of the carriers which are injected into the active layer (13). This perturbation leads to perturbation of the gain coefficient without increasing the internal losses, by virtue of which it is possible to obtain oscillation on a single longitudinal mode, facilitating the gain coupling. <IMAGE>
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