| 摘要 |
The semiconductor device is mfd. by (a) forming a second buried layer (2) and a first electroconductive bottom-isolating layer (3) on the fixed part of the first electroconductive substrate (1), (b) forming a second electroconductive low density epitaxy layer (4) on the whole surface of the substrate (1), (c) etching a fixed part of an isolating layer region and a collector- forming region, (d) forming a first electroconductive top- isolating layer (5) and a second electroconductive collector region (6) on the etched part of the layer (4), (e) forming a first electroconductive base region (7) on the layer (4), (f) forming a second emittor region (8) on the base (7), and (g) forming an insulating film, the collector, the base, the emitter contact window and an electrode.
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