发明名称 Semiconductor memory with wordline control - generates wordline control signal for transfer to selected wordline and determines whether generated wordline signal should be boosted
摘要 A word line control signal generator (511) provides a signal to be transmitted to selected word line. A detector (701) responds to a different signal and determines wether a generated word line control signal should be boosted. A boosting circuit (702) responds to the detector for this purpose. Pref. the detector checks the voltage supply level to the semiconductor memory. A decision device responds accordingly to prevent the word line control signal boosting when the voltage level has exceeded a preset level. USE/ADVANTAGE - For dynamic semiconductor memories. Prevents unnecessary holding of wordline at high voltage, thus breakthrough voltage of wordline is not degraded.
申请公布号 DE4226710(A1) 申请公布日期 1993.06.03
申请号 DE19924226710 申请日期 1992.08.12
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 ICHIGUCHI, TETSUICHIRO, ITAMI, HYOGO, JP
分类号 G11C11/407;G11C5/14;G11C8/08;G11C8/18;G11C11/401;G11C29/06 主分类号 G11C11/407
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