发明名称 |
Semiconductor memory with wordline control - generates wordline control signal for transfer to selected wordline and determines whether generated wordline signal should be boosted |
摘要 |
A word line control signal generator (511) provides a signal to be transmitted to selected word line. A detector (701) responds to a different signal and determines wether a generated word line control signal should be boosted. A boosting circuit (702) responds to the detector for this purpose. Pref. the detector checks the voltage supply level to the semiconductor memory. A decision device responds accordingly to prevent the word line control signal boosting when the voltage level has exceeded a preset level. USE/ADVANTAGE - For dynamic semiconductor memories. Prevents unnecessary holding of wordline at high voltage, thus breakthrough voltage of wordline is not degraded.
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申请公布号 |
DE4226710(A1) |
申请公布日期 |
1993.06.03 |
申请号 |
DE19924226710 |
申请日期 |
1992.08.12 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
ICHIGUCHI, TETSUICHIRO, ITAMI, HYOGO, JP |
分类号 |
G11C11/407;G11C5/14;G11C8/08;G11C8/18;G11C11/401;G11C29/06 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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