发明名称 |
EPITAXIAL GROWTH PROCESS |
摘要 |
An epitaxial layer of a compound semiconductor is grown in selected regions of a substrate by a laser activation process wherein the substrate is heated to 300 to 350 DEG C in an atmosphere of hydrides and low alkyls of the semiconductor elements and is irradiated by focussed ultraviolet laser radiation to effect deposition of the semiconductor. Typically the atmosphere comprises a mixture of arsine and trimethyl gallium to effect deposition of gallium arsenide. The process may be used in the fabrication of multilayer structures and quantum well devices. |
申请公布号 |
GB2234529(B) |
申请公布日期 |
1993.06.02 |
申请号 |
GB19890017097 |
申请日期 |
1989.07.26 |
申请人 |
* STC PLC;* NORTHERN TELECOM EUROPE LIMITED |
发明人 |
STEPHEN * ROLT;KENNETH GEORGE * SNOWDEN |
分类号 |
C23C16/04;C23C16/30;C30B25/10;H01L21/20 |
主分类号 |
C23C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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