发明名称 |
Method for selectively growing aluminum-containing layers. |
摘要 |
<p>Aluminum-containing layers are grown by molecular beam processes using as an arsenic precursor phenylarsine (PhAs). Because PhAs is more reactive than arsine and less reactive than arsenic, it decomposes selectively on III-V surfaces but not on mask materials. Thus in contrast to conventional processes, growth using PhAs permits selective growth on unmasked gallium arsenide surfaces but inhibits growth on typical mask materials such as silicon nitride.</p> |
申请公布号 |
EP0544437(A2) |
申请公布日期 |
1993.06.02 |
申请号 |
EP19920310487 |
申请日期 |
1992.11.18 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
ABERNATHY, CAMMY RENEE';PEARTON, STEPHEN JOHN;REN, FAN;WISK, PATRICK WILLIAM |
分类号 |
C23C16/18;C30B23/08;H01L21/20;H01L21/203;H01L21/205;H01L21/331;H01L29/205 |
主分类号 |
C23C16/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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