Thin film transistor, method of fabricating the same and ion implantation method used in the fabrication.

摘要

A method of the invention of fabricating a thin film transistor (20') on an insulating substrate (13) includes a step of forming a polysilicon film (14) on the insulating substrate (13); and an ion implantation step of exciting, in a magnetic field, ions (21) including hydrogen ions and ions of an element selected from the group consisting of the III, IV, V groups of the periodic system, and for simultaneously implanting the hydrogen ions and the selected element ions into the polysilicon film (14) to form at least one of a source (15) and a drain (16) region in the polysilicon film (14). <IMAGE>