发明名称 |
Plasma processing apparatus, plasma processing method, and storage medium |
摘要 |
A plasma processing apparatus that enables polymer to be removed from an electrically insulated electrode. A susceptor of the plasma processing apparatus is disposed in a substrate processing chamber having a processing space therein. A radio frequency power source is connected to the susceptor. An upper electrode plate is electrically insulated from a wall of the substrate processing chamber and from the susceptor. A DC power source is connected to the upper electrode plate. A controller of the plasma processing apparatus determines a value of a negative DC voltage to be applied to the upper electrode plate in accordance with processing conditions for RIE processing to be carried out. |
申请公布号 |
US9362090(B2) |
申请公布日期 |
2016.06.07 |
申请号 |
US201012973563 |
申请日期 |
2010.12.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Honda Masanobu;Matsui Yutaka;Sato Manabu |
分类号 |
C23C16/00;C23F1/00;H01L21/306;H01J7/24;H05B31/26;H01J37/32;H01L21/311;H01L21/02;H01L21/67 |
主分类号 |
C23C16/00 |
代理机构 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. A plasma processing apparatus for performing a method on a substrate having an inorganic film and an organic film formed thereon, the plasma processing apparatus comprising:
a substrate processing chamber that has therein a processing space into which the substrate is transferred and which carries out the plasma processing on the substrate in the processing space; a first electrode that is disposed in the substrate processing chamber and is connected to a radio frequency power source; a second electrode that has an exposed portion exposed to the processing space and is electrically insulated from the substrate processing chamber and the first electrode, the exposed portion comprising a silicon-based material; wherein the second electrode is connected to a DC power source; a switching device disposed between the second electrode and the DC power source, and a controller configured to control the apparatus to perform: a first step of carrying out plasma processing on the inorganic film under a condition where a potential difference between a plasma generated in the processing space and the second electrode is set to a value of the DC power source which enables the exposed portion of the second electrode to be sputtered by the generated plasma, and a second step of carrying out plasma processing on the organic film under a condition where the switching device cuts off electrical connection between the second electrode and the DC power source so as to electrically insulate the second electrode in a floating state and the potential difference between the generated plasma and the second electrode is set to a value which avoids the exposed portion of the second electrode from being sputtered by the generated plasma. |
地址 |
Tokyo JP |