METHOD OF MANUFACTURING SILICON-ON-INSULATOR

摘要

The silicon-on-insulator (SOI) is mfd. by (a) growing an oxide film (11) on the silicon substrate (10), (b) selectively lifting off the film (11) to form an epitaxial seed area, (c) selective epitaxial overgrowing the seed area to form a silicon layer (13), (d) forming a stress relief oxide (SRO) (14) and a nitride (Si3N4) film (15) on the layer (13), and then selectively lifting off the film (15), and (e) thermally oxidizing the layer (13) to form a field oxide film.