| 摘要 |
<p>An etching method for etching only the edge face of a wafer (1), and an apparatus therefor. The wafer is held by a chuck (2) and rotated at a low rate. An etching roller is in contact with the edge face of this wafer. To this etching roller (7,28), etching liquid is supplied by way of a supplying roller (8,27,29), whereby a small amount of the etching liquid is attached to the edge face of the wafer, band only the edge face of the wafer is etched. When the wafer rotates, a pure water washing roller (22,31) is also in contact with the edge face of the wafer. The edge face of the wafer is etched, and at the same time, the wafer is washed with pure water by this washing roller (22,31). On the surface of the wafer, nitrogen gas is blown toward the periphery in a ring form, whereby the gas of the etching liquid may not flow on the surface of the wafer. <IMAGE></p> |
