Non-volatile semiconductor memory device having thin film memory transistors stacked over associated selecting transistors.

摘要

A electrically erasable and programmable read only memory device has a memory cell array implemented by a plurality of floating gate type memory transistors, and each of the floating gate type memory transistors is implemented by a thin film field effect transistor with a floating gate electrode (16) formed over a relatively thick insulating film (13) covering a major surface of a semiconductor substrate (12) so that the biasing conditions and crystal defects do not have any influence on the floating gate type memory transistor. <IMAGE>