PROCESS FOR THE FORMATION OF A FUNCTIONAL DEPOSITED FILM CONTAINING GROUPS III AND V ATOMS AS THE MAIN CONSTITUENT ATOMS BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS,申请号EP19890101534-传众专利搜索

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发明名称	PROCESS FOR THE FORMATION OF A FUNCTIONAL DEPOSITED FILM CONTAINING GROUPS III AND V ATOMS AS THE MAIN CONSTITUENT ATOMS BY MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION PROCESS
摘要
申请公布号	EP0326986(B1)	申请公布日期	1993.06.02
申请号	EP19890101534	申请日期	1989.01.30
申请人	CANON KABUSHIKI KAISHA	发明人	KANAI, MASAHIRO
分类号	C23C16/50;C23C16/30;C23C16/452;C23C16/511	主分类号	C23C16/50
代理机构		代理人
主权项
地址

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