GaAs thin films and methods of making and using the same

摘要

Disclosed herein are embodiments of methods for making GaAs thin films, such as photovoltaic GaAs thin films. The methods disclosed herein utilize sources, precursors, and reagents that do not produce (or require) toxic gas and that are readily available and relatively low in cost. In some embodiments, the methods are readily scalable for industrial applications and can provide GaAs thin films having properties that are at least comparable to or potentially superior to GaAs films obtained from conventional methods.

主权项

1. A method comprising:
forming a GaAs thin film on a deposition substrate by the steps of
providing a GaAs powder source;providing a dopant source; andusing vapor transport with a chemical transport agent to deposit the GaAs thin film on the deposition substrate, the GaAs thin film having Hall mobilities of 1000-4200 cm2V−1s−1 for an n-type GaAs thin film and/or 50-240 cm2V−1s−1 for a p-type GaAs thin film.