发明名称 HYBRID INTEGRATED CIRCUIT SUBSTRATE
摘要 PURPOSE:To achieve the high lamination of a hybrid integrated circuit substrate and to achieve the high-density mounting operation of a chip by a method wherein a recessed hole is made on the surface of the hybrid integrated circuit substrate composed of a derivative material and the inside of the recessed hole is covered with a metal film. CONSTITUTION:A plurality of recessed holes 2 are made on a hybrid integrated circuit substrate 1; the holes 2 are formed to be deeper than the thickness of chips to be mounted. The inside of each hole 2 is covered with a metal film 3. When the hybrid integrated circuit substrate 1 is used, a chip 4 does not protrude on the substrate. Since the connection part of the chip 4 becomes lower than the position of the connection part of the hybrid integrated circuit substrate 1, bonding wires 5 which are used to connect the hybrid integrated circuit substrate 1 to the chip 4 are not bent at the upper part of the hybrid integrated circuit substrate 1. Thereby, the high lamination of the hybrid integrated circuit substrate and the high density of the chip can be achieved.
申请公布号 JPH05136182(A) 申请公布日期 1993.06.01
申请号 JP19910321187 申请日期 1991.11.08
申请人 NEC CORP 发明人 KITANO TOSHIHIKO
分类号 H01L21/52;H01L25/04;H01L25/18 主分类号 H01L21/52
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