| 摘要 |
PURPOSE:To secure the allowance in superposition between a bit line contact hole and a bit line by opening the bit line contact hole and an accumulating electrode contact hole at the same time, and filling up the accumulating electrode contact hole with one part of a bit line constituting material. CONSTITUTION:An interlayer insulating film 5 is made on a p-type Si substrate 1 at the same time, and then a bit line contact hole 6 and an accumulating electrode contact hole 7b are opened at the same time. Next, the sidewalls 9 and 10 of SiO2 are made at two kinds of contact holes 6 and 7. Next, a polycrystalline film 11 to become a bit line, a tungsten silicide film 12, and a silicon dioxide film 13 are stacked in order. At this time, by the bit line material, a stop part 30 covers one part of the sidewall 10 of the accumulating electrode contact hole 7. Hereby, the quantity of the superposition between the bit line contact hole and the bit line and the allowance in superposition between the accumulating electrode contact hole and the bit line can be secured. |
