| 摘要 |
According to the present invention, a control gate is formed on an n-type Si substrate, and a p-type source-drain region is formed in the surface of the substrate on both the sides of the control gate. A p-type SixGe1-x (0</=x<1) layer and an Al electrode are sequentially formed in the source-drain region. The energy difference between the valence band of the SiGe layer and a vacuum level is smaller than the energy difference between the valence band of an Si layer constituting the source-drain region and the vacuum level, and the energy difference of the conduction band of the SiGe layer and the vacuum level is larger than the energy difference of the conduction band of the Si layer and the vacuum level. For this reason, a Schottky barrier height is decreased, and resistances between the semiconductor layers and the Al electrode are reduced.
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