| 发明名称 | Film portion at wafer edge | ||
| 摘要 | A film layer on a substrate of the wafer is patterned to form a first plurality of areas of the film layer and a second plurality of areas of the film layer. The first plurality of areas of the film layer is removed. The second plurality of areas of the film layer is kept on the substrate. A first portion of the film layer is kept on the substrate. A first edge of the first portion of the film layer is substantially near an edge of the wafer. The first portion of the film layer defines a boundary for the wafer. | ||
| 申请公布号 | US9372406(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201313764155 | 申请日期 | 2013.02.11 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chang Chun-Wei;Mo Wang-Pen;Hsieh Hung-Chang |
| 分类号 | H01L21/311;G03F7/20;H01L21/308;H01L21/027;G03F7/00;H01L21/3105 | 主分类号 | H01L21/311 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A method for preparing a wafer, comprising: patterning a film layer on the wafer to form an annular portion of the film layer and a circular portion of the film layer, the circular portion contained within the annular portion, the circular portion having a plurality of patterned features therein; keeping the circular portion of the film layer on the wafer; keeping the annular portion of the film layer on the wafer; and removing portions of the plurality of patterned features of the film layer from within the circular portion, wherein the annular portion and the wafer directly thereunder are free from having patterned features;a first edge of the annular portion is substantially near an edge of the wafer; andthe first edge of the annular portion of the film layer defines a boundary for the wafer. | ||
| 地址 | TW | ||