| 摘要 |
PURPOSE: To utilize a wide range of doping gas concentration and to obtain dopant concentration over a corresponding wide range when making a junction by preventing oxide from being formed on a semiconductor surface. CONSTITUTION: After a semiconductor substrate 18 has been placed on a susceptor 16, a carrier gas that is an inert gas or a reduction gas is filled into a vacuum chamber 26. Then, the semiconductor substrate 18 is heated to a range of approximately 750-1,100 deg.C and a dopant gas is introduced into a vacuum chamber 26. In this case, the semiconductor substrate 18 is exposed to a dopant gas within the atmosphere of the carrier gas for a process time within a range of approximately 0.5-100 minutes, thus forming a shallow junction with a wide range of surface dopant concentration, hence forming a shallow electrode-like junction with a wide range of surface densities for application to a diversified semiconductor shapes. |
