| 摘要 |
PURPOSE:To reduce resistance between a transistor region and a polycrystalline layer, i.e., a storage node of a capacitor, by forming an epitaxial layer as a whole together with a polycrystalline layer that covers an insulating layer on a trench inside wall. CONSTITUTION:An accumulated electrode (a polycrystalline silicon film 34) within a groove 15 and a single-crystal silicon film 33 on an active region are selectively formed at the same time under reduced pressure continuously in a chemical vapor deposition method. Since a sidewall contact is unnecessary in this method, a spontaneous oxide film can be eliminated at an interface between the accumulated electrode and a source or drain in a transistor region 13. Consequently, resistance between a transistor region and a polycrystalline layer, i.e., a storage node of the capacitor, can be reduced. |
