| 摘要 |
PURPOSE:To reduce the area of one memory cell occupied on a semiconductor substrate, by forming a transistor on an interlayer insulating layer located right above a capacitor that is electrically connected to the capacitor. CONSTITUTION:A capacitor cell unit is formed in a conventional manufacturing method. In the semiconductor memory, a pass transistor unit is constituted by a polycrystalline silicon layer 21, a source/drain region 22, a third insulating layer 23, and a gate electrode 24 on the capacitor cell unit. Consequently, the area of one memory cell occupied on a semiconductor substrate is reduced so that the integration density can be improved in the semiconductor memory. Since a capacitor and a pass transistor can be separately formed, the thickness of an insulator and an electrode or the materials are selected in a free manner. |
