| 摘要 |
<p>PURPOSE:To obtain a TET panel which can apply a uniform gate voltage by selectively anodically oxidizing the surface of a gate line. CONSTITUTION:An intersection of the gate electrode G of a gate line GL and a data line DL is made up of a double layer film where an oxide insulating layer te made of a metal oxide is generated on the surface layer of a nonoxide layer (a), and the other part of the gate line GL a double layer film only at both side edges. The center of a line part where the data line DL does not face is made up of a monolayer film only in the nonoxide layer (a): when the nonoxide region of the gate line GL is coated with a resist to a terminal part is anodically oxidized without dipping in an electrolyte, the terminal part of the gate line GL is not oxidized. Therefore, a nearly uniform gate voltage can be applied to respective thin film transistors 2 arraying along a gate line, so that those arraying along a data line can be operated by uniform operating characteristics.</p> |
