| 摘要 |
PURPOSE:To realize a plurality of peak current values whose amplitudes are uniform in a resonance tunnel three-terminal structure, make the peak values of the resonance tunnel current correspond to a multivalued logic state, and realize a functional circuit which has complex functions with a small number of elements. CONSTITUTION:On an N-type GaAs crystal substrate 21, the following are formed in order; an N-type GaAs layer (collector layer) 22, an AlGaAs first barrier layer 23, a P-type GaAs quantum well layer (base layer), an AlGaAs second barrier layer 25, and an N-type GaAs layer (emitter layer) 26. A base region is divided into three quantum wells by the AlGaAs first barrier layer 23, the AlGaAs second barrier layer 25, and two intermediate barrier layers 18, 19. The widths of two quantum wells adjacent to the AlGaAs first barrier layer 23 and the AlGaAs second barrier layer 25 are larger than the width of the other quantum well. |
