发明名称 Fan-out PoP stacking process
摘要 Package on package structures and manners of formation are described. In an embodiment, an array of trenches is formed partially through a fan-out substrate. In an embodiment, a plurality of laterally separate locations thermal interface material is dispensed onto an array of embedded bottom die. In an embodiment a thermal compression tool including an array of cavities corresponding to an array of top packages is brought into contact with the array of top packages and underlying fan-out substrate during PoP joint formation. The fan-out substrate may be secured to a vacuum chuck during several processing operations.
申请公布号 US9379097(B2) 申请公布日期 2016.06.28
申请号 US201414494253 申请日期 2014.09.23
申请人 Apple Inc. 发明人 Chung Chih-Ming
分类号 H01L21/00;H01L25/00;H01L21/56;H01L21/78;H01L25/065;H01L23/00;H01L23/498 主分类号 H01L21/00
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A method of forming a semiconductor device package comprising: forming an array of trenches partially through a fan-out substrate that includes an array of embedded bottom die such that the trenches are formed in an active side of the fan-out substrate and do not extend completely through the fan-out substrate; mounting the active side of the fan-out substrate to a temporary adhesive layer and removing a carrier substrate from the fan-out substrate; dispensing a thermal interface material onto the array of embedded bottom die at a plurality of laterally separate locations; bonding an array of top packages to a surface of the fan-out substrate opposite the active side of the fan-out substrate that is mounted to the temporary adhesive layer after forming the array of trenches partially through the fan-out substrate, wherein the array of top packages are directly over the array of embedded bottom die and the plurality of laterally separate locations of the thermal interface material; and applying an underfill material to the array of top packages, wherein the underfill material is characterized by a lower thermal conductivity than the thermal interface material, and each of the plurality of separate locations of the thermal interface material is completely laterally surrounded by the underfill material.
地址 Cupertino CA US
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