Grounding dummy gate in scaled layout design

摘要

A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.

主权项

1. A semiconductor device, comprising:
a dummy gate in a semiconductor device active area; a first active contact adjacent to the dummy gate; a first stacked contact electrically coupled to the first active contact and including a first isolation layer on sidewalls electrically isolating the first stacked contact from the dummy gate and a cap layer on a surface of the first stacked contact opposite the first active contact; and a first via electrically coupled to the dummy gate and landing directly on the surface of the first stacked contact through a portion of the cap layer and directly contacting the first isolating layer on a sidewall of the first stacked contact, the first via arranged to electrically couple the first stacked contact and the first active contact to the dummy gate to ground the dummy gate.