Method for manufacturing a microelectronic device including depositing identical or different metallic layers on the same wafer

摘要

A method for manufacturing a microelectronic device is provided, including forming a first semiconductor material layer on a first region of a top surface of a substrate; and forming a second semiconductor material layer on a second region of the top surface of the substrate distinct from the first region, forming a first metallic layer above the first layer; forming a first contact layer of a first intermetallic compound or solid solution; forming a first sacrificial layer in an upper portion of the first contact layer; forming a second sacrificial layer in an upper portion of the second layer; removing all of the second sacrificial layer so as to expose a residual portion of the second layer; partially removing the first sacrificial layer; forming a second metallic layer above said residual portion; and forming a second contact layer of a second intermetallic compound or solid solution.

主权项

1. A method for manufacturing a microelectronic device on a substrate, comprising:
forming a first layer of a first semiconductor material on a first region of a top surface of the substrate; and forming a second layer of a second semiconductor material on a second region, distinct from the first region, of the top surface of the substrate, the method further comprising, after the formation of the second layer: forming a first metallic layer above the first layer; forming a first contact layer of a first intermetallic compound or solid solution, the first contact layer comprising at least one portion of the first layer and at least one portion of the first metallic layer; forming a first sacrificial layer by oxidation, with a thickness e1, in an upper portion of the first contact layer; forming a second sacrificial layer by oxidation, with a thickness e2, in an upper portion of the second layer; removing all of the second sacrificial layer so as to expose a residual portion of the second layer; partially removing the first sacrificial layer; forming a second metallic layer above said residual portion; and forming a second contact layer of a second intermetallic compound or solid solution, the second contact layer comprising at least one portion of said residual portion and at least one portion of the second metallic layer.