Adjusting intensity of laser beam during laser operation on a semiconductor device

摘要

Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.

主权项

1. A system for treating a semiconductor device, comprising:
a laser configured to emit a laser beam that performs an anneal operation on the semiconductor device; a sensor configured to measure a reflection intensity of the laser beam, the reflection intensity indicative of a magnitude at which the laser beam is reflected from the semiconductor device; and a controller configured to control thermal absorption of the laser beam by the semiconductor device by adjusting an applied intensity of the laser beam as a function of the reflection intensity and a specified thermal absorption rate for the anneal operation, the applied intensity indicative of a magnitude at which the laser beam is emitted from the laser.