| 摘要 |
PURPOSE:To provide a MOS transistor of very small channel length which can be formed without use of a high-tech microworking. CONSTITUTION:The top and the bottom of a first polycrystalline silicon layer 6 having a first conductivity type are overlaid with second and third polycrystalline silicon layers 5,7 having a second conductivity type, respectively, and the second and third polycrystalline silicon layers 5, 7 are used as source and drain, respectively, to form a channel in the film thickness direction of the first polycrystalline silicon layer 6. This process enables a channel much shorter than a prior art MOS transistor to be formed without use of a high-tech microworking and a channel length to be controlled with high precision. |
