| 摘要 |
PURPOSE:To reduce the rate of hole unevenness and deterioration of hole configuration due to dispersion of hole diameter by reducing the rate at which the thickness of a photosensitive film is partially reduced during developing process, and reducing the amount by which a non-sensitized portion is eluted. CONSTITUTION:In a manufacturing method of a shadow mask whereby a number of electron-beam through holes 8 are formed in a shadow mask material 20 through the processes of exposure, developing, burning and etching after formation of a photosensitive film 21 on the shadow mask material 20 by means of the application and drying of a photosensitizer, the thickness of the photosensitive film is 5.0 to 6.0mum and during the developing process soft-develop by which the film thickness does not vary much is performed by means of spraying of a liquid at a pressure of 1kg/cm<2> or less and a flow rate of 1.5l/min or less. |
