发明名称 |
Method of manufacturing pn-junction device II-VI compound semiconductor |
摘要 |
This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting of a plurality of stacked pairs of ZnSe semiconductor layer and acceptor-impurity-doped ZnS0.12Se0.88 mixed crystal semiconductor layer formed on a part of a buffer layer of ZnS0.06 Se0.94 etc. which is formed on a crystalline substrate of GaAs etc., the n-type semiconductor region being formed on the part of the buffer layer, where the superlattice is not formed, and the side wall of the superlattice region contiguous to the n-type region to form pn-junction being made clean by etching, so that a pn-junction of n-type semiconductor and p-type semiconductor having high carrier-density resulted.
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申请公布号 |
US5215929(A) |
申请公布日期 |
1993.06.01 |
申请号 |
US19910800415 |
申请日期 |
1991.11.29 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OKAWA, KAZUHIRO;MITSUYU, TSUNEO |
分类号 |
H01L21/28;H01L21/302;H01L21/3065;H01L21/465;H01L21/4757;H01L33/06;H01L33/12;H01L33/28;H01L33/30;H01L33/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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