| 摘要 |
A semiconductor device includes a semiconductor body of one conductivity type, source and drain regions formed in the surface area of the semiconductor body, a gate insulating film formed on the semiconductor body between the source and drain regions, a gate electrode formed on the gate insulating film, an insulating member formed on the source and drain regions and in contact with the side walls of the gate electrode. Each of the source and drain regions includes a first impurity region of the opposite conductivity type and a second impurity region having a higher impurity concentration than that of the first impurity region and formed in the first impurity region to extend below the gate electrode.
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