| 摘要 |
PURPOSE:To stabilize read-out operation and prevent read error by connecting a dummy memory element to a data line, and seeing that the data line gets in high impedance condition in selected condition. CONSTITUTION:Dummy memory rows consisting of series forms, which make out current leak paths, are connected in common to each data line D0, D1,.... Control voltage is applied to the gate terminal of a dummy MOSFET Qr. Therefore, it follows that an optional current is flowing to the common data line CD, but the current value changes by the storage information of the MOSFET for storage in the series form being selected by a selection signal. A sense amplifier SA performs the read-out operation by comparing the current value of the MOSFET Qm row for series storage with the current flowing to dummy arrays UDC and LDC and sensing it. Hereby, the high impedance state of the common data line ceases to exist, and the read-out operation can be stabilized. |
