| 摘要 |
PURPOSE:To increase capacitance with the same area of cells as before, by forming a capacitor made up of three capacitors that are deposited each as a layer. CONSTITUTION:A first capacitor is made up of an SiO2 film 6 as a first dielectric substance deposited on a surface layer in a silicon substrate, and an under plate electrode 7 as a field plate formed thereon. A second capacitor is made up of the under electrode 7 an SiO2 film 8 as a second dielectric substance formed thereon, and a node electrode 9 on the SiO2 film 8. A third capacitor is made up of the node electrode 9, an SiO2/SiN film 10 as a third dielectric substance formed thereon, and an upper plate electrode 11 on the SiO2/SiN film 10. These three capacitors are deposited to constitute one capacitor. Consequently, the capacitance can be increased with the same area of cells as before. |
