| 摘要 |
PURPOSE:To facilitate the processing of the wiring layer of an upper layer by lessening the step at the part excluding a contact hole when opening the contact hole in self alignment manner. CONSTITUTION:An SiO2 film 18 is stacked all over the surface, and the SiO2 film 18 is anisotropically etched with the photoresist, which is opened only on the diffusion layer 16 to open a contact hole 21, with a mask so as to open the contact hole 21 in self alignment manner. Then, resist 34 is applied flatly all over the surface, and the whole faces of the resist 34 and the SiO2 film 18 are anisotropically etched until the SiO2 film 15 is exposed. Therefore, the SiO2 film in the recess, where a polycrystalline film 14 is not patterned and a contact hole 21 is not opened, either, is not etched being covered with a resist 34. |
