| 摘要 |
<p>PURPOSE:To surely prevent a short circuit between a lower wiring and an upper wiring with development of no cracks of an insulating film by preventing hillocks or bumps from developing during formation of an insulating film although at least the lower wiring is formed of Al of low cost and low resistance value. CONSTITUTION:At least a lower wiring (scanning wiring) 11 is formed of Al containing a high melting point metal (e.g. Ti) and doped with about 4at% or more of nitrogen.</p> |
