| 摘要 |
PURPOSE: To obtain a new process for forming a local interconnect structure in a semiconductor device. CONSTITUTION: A process consists of a stage for providing two conductive regions 54 and 56, that are to be connected electrically to a semiconductor device, a stage for depositing a metal film, for example, titanium film on a semiconductor substrate, and a stage for forming a strap for connecting two conductive regions by patterning a metal film and a stage for forming an interconnect 66 of a conductive metal nitride, by thermally nitriding a strap after the patterning of the metal film. |
